Myself Dipak Kumar Goswami
Max Planck Institute for Metals Research
Heisenbergstraße 3
D-70569 Stuttgart, Germany
Email: xdipak@gmail.com


Designed & Maintained:
Dipak K Goswami
LIST OF PUBLICATIONS
  1. Ion irradiation induced mixing, interface broadening and period dilation in Pt/C multilayers
    S. K. Ghose, D. K. Goswami, B. Rout and B. N. Dev, G. Kuri and G. Materlik
    Appl. Phys. Lett., 79 (2001) 467-469.
  2. Ion beam studies in strain layer superlattices
    A. P. Pathak, S. V. S. Nageswara Rao, A. M. Siddiqui, G. B. V. S. Lakshmi, S. K. Srivastava, D. Bhattacharya, D. K. Avasthi, D. K. Goswami, P. Satyam, B. N. Dev,
    Nucl. Inst. and Meth., B 193 (2002) 319-323.
  3. Nanoscale self-affine surface smoothing by ion bombardment
    D. K. Goswami and B. N. Dev
    Phys. Rev. B68, (2003) 033401. cond-mat/0212563.
  4. Growth of self-assembled nanostructures by molecular beam epitaxy
    D. K. Goswami, B. Satpati, P. V. Satyam and B. N. Dev
    Current Science, 84 (2003) 903-910.
  5. Observation of self-affine fractal roughness in MeV ion irradiated Si surfaces using scanning tunneling microscopy
    D. K. Goswami and B. N. Dev
    Nucl. Inst. and Meth. B 212 (2003) 253-257.
  6. Crater formation in gold nanoislands due to MeV self-ion irradiation
    P. V. Satyam, J. Kamila, S. Mahapatra, B. Satpati, D. K. Goswami, B. N. Dev, R. E. Cook, Lahsen Assoufid, S. Narayanan, J. Wang, N. C. Mishra
    J. Appl. Phys., 93 (2003) 6399-6401.
  7. Low current MeV Au ion-induced amorphization in silicon: Rutherford Backscattering Spectrometry and Transmission Electron Microscopy study
    J. Kamila, B. Satpati, D. K. Goswami, M. Rundhe, B. N. Dev and P. V. Satyam
    Nucl. Inst. and Meth. B 207 (2003) 291-295.
  8. Study of sputtered particles under thermal spike confinement effects
    B. Satpati, D. K. Goswami, J. Kamila, T. Som, B. N. Dev, and P. V. Satyam
    Nucl. Inst. and Meth., B 212 (2003) 332-338
  9. Energy spike induced effects in MeV ion-implanted nanoislands
    B. Satpati, D. K. Goswami, U. D. Vaishnav, T. Som, B. N. Dev and P. V. Satyam
    Nucl. Inst. and Meth. B 212 (2003) 157-163.
  10. Ion irradiation induced impurity redistribution in Pt/C multilayers
    S. Bera, D. K. Goswami, K. Bhattacherjee, B. N. Dev, G. Kuri, K. Nomoto, K. Yamashita
    Nucl. Inst. Meth. B 212 (2003) 530-534.
  11. Atomic scale height preference in Ag islands on Si(111)-(7x7) surfaces
    D. K. Goswami, K. Bhattacharjee, B. Satpati, S. Roy, G. Kuri, P. V. Satyam and B. N. Dev
    cond-mat/0311506, (submitted to Surf. Sci.).
  12. Ge growth on ion-irradiated Si surfaces: Self-affine fractal structure
    D. K. Goswami, K. Bhattacharjee and B. N. Dev
    cond-mat/0403241, Surf. Sci. 564 (2004) 149-155.
  13. Effect of quantum capacitance in single electron tunneling observed in Ag nano islands
    D. K. Goswami, K. Bhattacharjee, A. M. Jayannavar and B. N. Dev
    (to be published)
  14. Nanoscale self-affine surface smoothing by ion bombardment and the morphology of nanostructures grown on ion bombarded surfaces
    K. Bhattacharjee, S. Bera D. K. Goswami, and B. N. Dev
    Nucl. Instr. Methd. B230 (2005) 524-532.
  15. The controlled evolution of a polymer single crystal
    X. Liu, Y. Zhang, D. K. Goswami, J. S. Okasinski, K. Salaita, P. Sun, M. J. Bedzyk, C. A. Mirkin
    Science, 307 (2005) 1763-1766.
  16. Nonmagnetic to magnetic nanostructures via ion irradiation.
    B. N. Dev, S. Bera, B. Satpati, D. K. Goswami, K. Bhattacharjee, P. V. Satyam, K. Yamashita, O. M. Liedke, K. Potzger, J. Fassbender, F. Eichhorn, R. Groetzschel
    Microelectronic Engineering, 83, (2006) 1721-1725.
  17. Ion-beam induced one-dimensional to three-dimensional periodic transformation in nano structured multilayers.
    S. Bera, D. K. Goswami, B. Satpati, K. Bhattacharjee, P. V. Satyam, and B. N. Dev,
    J. Appl. Phys. 99, (2006) 074301-5
  18. Coexistent compressive and tensile strain in Ag islands on Si (111) - (7x7) surfaces.
    D. K. Goswami, K. Bhattacharjee, B. Satpati, G. Kuri, P. V. Satyam, B. N. Dev,
    (2006) (submitted to Thin Solid Films).
  19. Imaging of Atomic Layer Deposited (ALD) Tungsten Monolayers on r-TiO2(110) by X-ray Standing Wave Fourier Inversion
    C.-Y. Kim, J. W. Elam, M. J. Pellin, D. K. Goswami, S. T. Christensen, M. C. Hersam, P. C. Stair, and M. J. Bedzyk
    J. Phys. Chem. B, 110 (2006) 12616-12620


CONTRIBUTION TO BOOK
    Growth of self-assembled epitaxial germanium nanoislands on silicon surfaces by molecular beam epitaxy
    D. K. Goswami, B. Satpati, P. V. Satyam and B. N. Dev
    Physics at Surfaces and Interfaces, Edited by B. N. Dev, World Scientific, Singapore (2002) 93 - 98.


CONFERENCE PROCEEDINGS
  1. Determination of the surface diffusion activation energy by X-ray reflectometry
    Amal K. Das, S. K. Ghose, D. K. Goswami and B. N. Dev
    Solid State Physics (India) 43 (2000), 328-329.
  2. Growth of self-assembled Ge nanoislands on Si(100) by molecular beam epitaxy
    D. K. Goswami, B. Satpati, P. V. Satyam and B. N. Dev
    Solid State Physics (India) 44 (2001) 267-268.
  3. Self-assembled gold silicide wire growth on Si(110) surface: A transmission electron microscopy study
    B. Satpati, D. K. Goswami, A. K. Dash, P. V. Satyam and B. N. Dev
    Solid Physics State (India) 44 (2001) 265-266.
  4. Electronic structure of the Ag layers on Si(111) surfaces: A scanning tunneling microscopy study
    D. K. Goswami, K. Bhattacharjee and B. N. Dev.
    Solid State Physics (India) 45 (2002) 333-334.
  5. Growth of self-assembled nanostructures by molecular beam epitaxy and their characterizations by scanning tunneling microscopy and spectroscopy
    D. K. Goswami, K. Bhattacharjee, B. Satpati, S. Roy, P. V. Satyam and B. N. Dev
    INAE Conference on Nanotechnology , Indian National Academy of Engineering, (2003) 308-316