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|
Compound |
Formula |
Decomposition or softening
point. íC |
Remarks |
|
silicon
carbide |
SiC |
2500-2800* |
high
thermal conductivity very hard resistant to oxidation up to 1600 íC |
|
boron
carbide |
B4C |
2450 |
Very
hard (9.3 Mohs). |
|
Zirconium
carbide |
ZrC |
3550 |
Stable
in nitrogen or hydrogen. |
|
Hafnium
carbide |
HfC |
3900 |
Very
high use linit in vacuum ,oxidizes above 800 íC |
|
Tantalum
carbide |
TaC |
3900 |
Same
properties as HFC. |
|
Graphite
|
C |
3650 |
Good
hot strength.Not resistant to oxidation. |
|
Zirconium
boride |
ZrB |
3040 |
Starts
to oxidize above 900 íC. |
|
Titanium
boride |
TiB |
2940 |
Can
be used for short period up to 1400 íC |
|
Titanium
nitride |
TiN |
2940 |
Starts
to oxidize above 1100 íC |
|
Zirconium
nitride |
ZrN |
2890 |
Starts
to oxidize above 1100 íC |
|
Molybdenum
disilicide. |
MoSi2 |
2105 |
Resistant
to oxdation to 1820 íC Electrical conductor. used for
heation elements |